The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19a-PB4-1~9] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB4 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB4会場)

9:30 AM - 11:30 AM

[19a-PB4-9] Effect of Annealing on Structural Properties of Silicon Implanted by Xenon-ion

○Hitoe Habuchi1, Shiori Fujita1, Tamio Iida1, Fumitaka Ohashi2, Takayuki Ban2, Tetsuji Kume2, Shuichi Nonomura2 (Gifu. Natl. Coll. Technol.1, Gifu Univ.2)

Keywords:キセノンイオン注入,シリコンクラスレート