Low Resistivity SiC-SBD with Optimized Doping Profile of Drift Layer

Presentation information

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

9:30 AM - 11:30 AM

^○Takaaki Tominaga¹, Akihiro Koyama¹, Takanori Tanaka¹, Hiroshi Watanabe¹, Nobuyuki Tomita¹, Satoshi Yamakawa¹ (Mitsubishi Electric¹)

Keywords:SiC,SBD,エピタキシャル