[19a-PB5-1~17] 15.6 IV-group-based compounds

[19a-PB5-17] Stability of the Electrical Characteristics of SiC-MOSFETs irradiated with Gamma-rays

^○Takashi Yokoseki^1,2, Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Takeshi Ohshima², Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (Saitama Univ.¹, JAEA², Sanken Electric Co., Ltd.³)

Keywords:SiC