The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[19a-PB5-1~17] 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

9:30 AM - 11:30 AM

[19a-PB5-6] Correlation between Impurity Activation and Cooling Rate during Thermal Plasma Jet Annealing of 4H-SiC

○Keisuke Maruyama1, Hiroaki Hanafusa1, Hideki Murakami1, Shohei Hayashi1, Seiichiro Higashi1 (Graduate School of Advanced Sciences of Matter, Hiroshima University1)

Keywords:SiC,熱プラズマジェット,不純物活性化