[19a-S1-1~13] 14.5/15.3/15.4 Code-sharing session

[19a-S1-4] Impurity Incorporation Processes in Si-doped GaAsN Thin Films Grown by Atomic Layer Epitaxy

^○Yuki Yokoyama¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Atsuhiko Fukuyama¹, Tetsuo Ikari¹ (Faculty of Engineering, Univ. of Miyazaki¹)

Keywords:原子層エピタキシー