Polarization of N-H bonds during growth of GaAsN by chemical beam epitaxy

Presentation information

Oral presentation

Code-sharing session » 14.5/15.3/15.4 Code-sharing session

Fri. Sep 19, 2014 9:00 AM - 12:30 PM S1 (S1)

11:00 AM - 11:15 AM

^○(PC)Kazuma Ikeda¹, Koushirou Demizu¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (TTI¹)

Keywords:GaAsN,N-H complex,chemical beam epitaxy