[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[19a-S2-11] Electrostatic control of the tunnel-magnetoresistance polarity in a Ni/Al/Ni-single-electron transistor

Ryusuke Kobayashi¹, ^○Naoki Tsujimichi¹, Hiroshi Shimada¹ (Univ. of Electro-Cummunications¹)

Keywords:強磁性単一電子トランジスタ,スピン蓄積,トンネル磁気抵抗