The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 2:00 PM - 6:00 PM A19 (E311)

2:30 PM - 2:45 PM

[19p-A19-3] Formation of Highly Pure Metallic Ruthenium Film Using Hot-wire-assisted Atomic Layer Deposition for Electrode Applications

Guangjie Yuan1, Hideharu Shimizu1, Takeshi Momose1, Yukihiro Shimogaki1 (The Univ. of Tokyo1)

Keywords:Hot wire,Atomic layer deposition,electrode