[19p-A25-1~16] 16.3 シリコン系太陽電池

▼ [19p-A25-11] A Low Surface Recombination Velocity Realized on Textured c-Si by Cat-CVD SiN_x/P Cat-doped Layers

^〇（D）Cham Thi Trinh^1,2，Koyama Koichi^1,2，Ohdaira Keisuke^1,2，Matsumura Hideki^1,2 (JAIST¹，CREST²)

キーワード：Passivation layer,Cat-CVD silicon nitride,Phosphorus Cat doping