The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 1:45 PM - 6:45 PM A26 (E319)

6:30 PM - 6:45 PM

[19p-A26-19] Effects of Ga2O3 doping on the formation of Zn3N2 films during Reactive RF Sputtering

○Jun-ichi Iwata1, Yu Hirano1, Hiroki Sase1, Hiroshi Katsumata1 (Meiji Univ.1)

Keywords:ZnO,Zn3N2,Ga2O3