The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 1:45 PM - 6:45 PM A26 (E319)

3:45 PM - 4:00 PM

△ [19p-A26-9] Growth of GaSe crystals by liquid phase epitaxy under controlled Se vapor pressure and its evaluation

○Kohei Suzuki1, Yuki Nagai1, Kunihiko Yamamoto1, Kensaku Maeda1, Kyosuke Saito1, Yutaka Oyama1 (Tohoku Univ.1)

Keywords:GaSe,テラヘルツ波,液相成長