The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

6:15 PM - 6:30 PM

[19p-A27-16] Residual oxygen atoms in β-FeSi2 with SiN capped annealing

Takafumi Kato1, Hitoshi Wakabayashi2, Akito Sasaki2, Kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (Tokyo Tech. FRC1, Tokyo Tech IGSSE2)

Keywords:太陽電池,テツシリサイド,バリウムシリサイド