Energetic Evaluation of the Possibility of Interstitial Doping of BaSi2

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

4:00 PM - 4:15 PM

^○Yoji Imai^1,2, Mitsugu Sohma¹, Takashi Suemasu² (AIST¹, Univ. Tsukuba²)

Keywords:BaSi2,侵入型ドーピング,第1原理計算