[19p-C5-1~12] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

[19p-C5-10] Improved ion-beam-assisted MBE for high-quality cubic BN (111) growth

^○Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (NTT BRL¹)

Keywords:立方晶窒化ホウ素,ダイヤモンド,イオンビームアシストMBE