[19p-C5-1~12] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

[19p-C5-11] InGaN-based Light Emitting Diodes on (-201) β-Ga2O3 Substrate for Large-current Operation

^○Kazuyuki Iizuka¹, Rikiya Suzuki¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Saori Umemura¹, Ken Goto¹, Yoshikatsu Morishima¹, Akito Kuramata¹, Shigenobu Yamakoshi¹, Ying-Yong Su², Yu-Jiun Shen², Gavin Liu² (TAMURA CORPORATION¹, EPISTAR CORPORATION²)

Keywords:Ga2O3,LED,GaN