5:15 PM - 5:30 PM
[19p-C5-11] InGaN-based Light Emitting Diodes on (-201) β-Ga2O3 Substrate for Large-current Operation
Keywords:Ga2O3,LED,GaN
Symposium
Symposium » Materials Science of Singularity in Nitride semiconductors~Characterization and Crystallography~
Fri. Sep 19, 2014 1:15 PM - 6:00 PM C5 (Open Hall)
5:15 PM - 5:30 PM
Keywords:Ga2O3,LED,GaN