[19p-C5-1~12] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

[19p-C5-3] Growth of hillock-free N-face GaN (000-1) films by group-III-source flow-rate modulation epitaxy

^○Tetsuya Akasaka¹, ChiaHung Lin¹, Hideki Yamamoto¹ (NTT Corp.¹)

Keywords:窒化物半導体,FME,ヒルロック