[19p-PB2-1~19] 14.3 Electron devices and Process technology

[19p-PB2-1] Surface defects of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts

^○Toshichika Aoki¹, Kenji Shiojima¹ (University of Fukui¹)

Keywords:p-AlGaN,p-InGaN,表面欠陥