Normally-off GaN MISFETs Using Ion Implantation of Magnesium

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

^○Hayao Kasai¹, Takuya Oikawa¹, Jun Kimura¹, Tomoyoshi Mishima¹, Tohru Nakamura¹ (Hosei univ.¹)

Keywords:GaN,MISFET