The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30~15:30(PB2会場)

1:30 PM - 3:30 PM

[19p-PB2-13] Effects of SiO2 deposition process on formation of contacts to 2D hole gas layers

Shunsuke Kubota1, Rei Kayanuma1, Akira Nakajima3, Shin-ichi Nishizawa3, Hiromichi Ohashi2,3, Kazuo Tsutsui1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Hiroshi Iwai2 (Tokyo Tech. IGSSE1, Tokyo Tech. FRC2, AIST3)

Keywords:パワーデバイス,GaN,オーミックコンタクト