[19p-PB2-1~19] 14.3 Electron devices and Process technology

[19p-PB2-13] Effects of SiO₂ deposition process on formation of contacts to 2D hole gas layers

^○Shunsuke Kubota¹, Rei Kayanuma¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,3, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC², AIST³)

Keywords:パワーデバイス,GaN,オーミックコンタクト