The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30~15:30(PB2会場)

1:30 PM - 3:30 PM

[19p-PB2-14] 600 V Switching Characteristics of GaN Polarization Super Junction (PSJ) Transistor on Sapphire

Shuichi Yagi1, Shoko Hirata1, Fumihiko Nakamura1, Sota Matsumoto1, Hironori Nakamura1, Hiroji Kawai1 (POWDEC K.K.1)

Keywords:窒化ガリウム,分極接合