The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

[19p-PB2-2] Influence of Surface Treatments on Ni/AlGaN/GaN Schottky Characteristics (2)

○(M2)ariabasu arusaruman1, takayuki sawada1, kazuhiko suzuki1, takahiru masuda1 (hokkaido University of Science1)

Keywords:Ni/AlGaN/GaN,ショットキー,I-V特性