Application of Al<sub>2</sub>O<sub>3</sub>/InAlN interface formed by 2-step ALD to MOSHEMT

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

^○Yoichiro Odanagi¹, Masamichi Akazawa¹, Asubar Joel¹, Zenji Yatabe¹, Tamotsu Hashizume¹ (Hokkaido Univ.¹)

Keywords:InAlN,MOS,Al2O3