The 75th JSAP Autumn Meeting, 2014

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

[19p-PB2-4] Characterization of traps in AlGaN/GaN HEMTs on Si by drain conductance DLTS

○Kazuki Miyamoto1, Yutaka Tokuda1, Hiroyuki Ueda2, Takashi Katuno2, Toru Kachi2 (Aichi Inst. of Technol.1, Toyota Central R&D Lab.,Inc.2)

Keywords:HEMT,AlGaN