Impact of superlattice periods beneath active layer on optical properties of InGaN-based light-emitting diodes

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB6 (Gymnasium2)

ポスター掲示時間16:00～18:00(PB6会場)

4:00 PM - 6:00 PM

^○Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

Keywords:発光ダイオード