[19p-PB6-1~26] 15.4 III-V-group nitride crystals

[19p-PB6-16] Luminescent properties of InGaN/GaN multiple quantum wells on semipolar facets formed using selective-area growth of Eu-doped GaN

^○Takanori Kojima¹, Shota Takano¹, Ryousuke Hasegawa¹, Dolf Timmerman¹, Atsushi Kozumi¹, Mitsuru Funato², Yoichi Kawakami², Yasuhumi Fujiwara¹ (Osaka Univ.¹, Kyoto Univ.²)

Keywords:選択成長,半極性,希土類