[19p-PB6-1~26] 15.4 III-V-group nitride crystals

[19p-PB6-20] Improvement of Properties of InAlN/GaN Heterostructure Using LT-AlN Spacer

^○(M2)Tatsuya Ito¹, Arata Watanabe¹, Keita Inoue¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

Keywords:InAlN