[19p-PB6-1~26] 15.4 III-V-group nitride crystals

▲ [19p-PB6-25] Realization of vertically well-aligned GaN nanowire based core-shell array growth by MOVPE : Morphology evolution and luminescent properties

^○(D)Byungoh Jung¹, Si-Young Bae¹, Masataka Imura², Yoshio Honda¹, Hiroshi Amano¹ (Nagoya Univ¹, NIMS²)

Keywords:GaN nanowire