[19p-PB6-1~26] 15.4 III-V-group nitride crystals

[19p-PB6-5] Fabrication of Pseudo Aluminum Growth of GaN by RF-MBE

^○(M2)Shinya Osawa¹, Yuto Watnabe¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, Tokyo National College of Technology²)

Keywords:半導体,Al,GaN