The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-PB6-1~26] 15.4 III-V-group nitride crystals

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB6 (Gymnasium2)

ポスター掲示時間16:00~18:00(PB6会場)

4:00 PM - 6:00 PM

[19p-PB6-7] Study on Homo-Epitaxial Growth of GaN by Radical-Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

○(P)Yi Lu1, Osamu Oda1, Hiroki Kondo1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (Nagoya Univ.1)

Keywords:ラジカル励起MOCVD,窒化ガリウム,ホモエピタキシャル成長