[19p-S10-1~18] 8.4 Plasma etching

[19p-S10-6] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas: Effects of Pulse Bias Etching

^○(D)Nobuya Nakazaki¹, Haruka Matsumoto¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

Keywords:Si etching,Inductively coupled Cl2 plasma,surface roughness