[19p-S2-1~15] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

^○(M2)Takafimi Yamamura¹, Xiaojie Yang¹, Takayuki Kiba¹, Junichi Takayama¹, Subagyo Agus¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Graduate School of Information Science and Technology, Hokkaido University¹)

Keywords:InGaAs