The 75th JSAP Autumn Meeting, 2014

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Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[20a-A10-1~10] 6.3 Oxide-based electronics

Sat. Sep 20, 2014 9:30 AM - 12:00 PM A10 (E214)

10:45 AM - 11:00 AM

[20a-A10-6] The dependence of electrode materials on resistance switching effect for the same ReRAM filament

○Sang-Gyu Koh1, Satoru Kishida1,2, kentaro Kinoshita1,2 (Tottori Univ.1, TEDREC2)

Keywords:抵抗変化メモリ,AFM,Electrode material