EL characteristics of Mg<sub>x</sub>Zn<sub>1-x</sub>O:N/ZnO heterojunction fabricated by the PARE method

Akira Nakagawa

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[20a-A12-1~10] Nanocarbon Technology

Sat. Sep 20, 2014 9:00 AM - 11:45 AM A12 (E301)

11:30 AM - 11:45 AM

[20a-A12-10] EL characteristics of Mg_xZn_1-xO:N/ZnO heterojunction fabricated by the PARE method

^○Akira Nakagawa¹, Takami Abe¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Syuzo Takahashi¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², Tsutomu Ojima¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Hiroshi Osada¹ (Iwate. Univ.¹, Sendai Nat. College of Tech.²)

Keywords:酸化亜鉛,ZnO,MgZnO

« Previous in this session
Next in this session »

▲

Presentation information

[20a-A12-1~10] Nanocarbon Technology

[20a-A12-10] EL characteristics of MgxZn1-xO:N/ZnO heterojunction fabricated by the PARE method

[20a-A12-10] EL characteristics of Mg_xZn_1-xO:N/ZnO heterojunction fabricated by the PARE method