The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

Sat. Sep 20, 2014 9:00 AM - 12:15 PM A19 (E311)

10:15 AM - 10:30 AM

[20a-A19-6] Electric properties of thermal oxide formed by minimal resistance furnace(Ⅱ)

Katsuhiko Nakato1, Fumito Imura1, Hitoshi Asano1, Shinnosuke Suzuki1,3, Shogo Matsuda1,3, Ayami Yaginuma1,3, Kiyohiko Morikawa1,3, Masashi Hattori1,3, Shinichi Ikeda1,2, Khumpuang Sommawan1,2, Shiro Hara1,2 (MINIMAL1, AIST2, Koyo Thermo System Co.,Ltd3)

Keywords:ミニマル