[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-6] Electric properties of thermal oxide formed by minimal resistance furnace(Ⅱ)

^○Katsuhiko Nakato¹, Fumito Imura¹, Hitoshi Asano¹, Shinnosuke Suzuki^1,3, Shogo Matsuda^1,3, Ayami Yaginuma^1,3, Kiyohiko Morikawa^1,3, Masashi Hattori^1,3, Shinichi Ikeda^1,2, Khumpuang Sommawan^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Koyo Thermo System Co.,Ltd³)

Keywords:ミニマル