[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

△ [20a-A20-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅲ)

^○Toru Muramatsu¹, Haruo Nakazawa¹, Masaaki Ogino¹, Hideaki Teranishi¹, Yoshikazu Takahashi¹, Hitoshi Habuka² (Fuji Electric Co., Ltd.¹, Yokohama National Univ.²)

Keywords:FZウェハ