[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

[20a-A20-4] Observations of vacancy and interstitial distributions depending on pulling rates during CZ silicon crystal growth by detaching from the melt

^○Takao Abe¹, Toru Takahashi¹, Kohun Shirai², Xiaowei Zhang³ (SEH¹, Osaka Univ.², KEK³)

Keywords:点欠陥,シリコン結晶