[20a-A25-6~13] 16.2 Processing technologies and devices

[20a-A25-6] [Young Scientist Oral Presentation Award Speech]（15min.）
Low-Temperature Transfer of SOI Layer with Midair Cavity by Meniscus Force and Its Application to Single-Crystalline Silicon TFT Fabrication on a Flexible Substrate

^○Kohei Sakaike^1,2, Muneki Akazawa¹, Yoshitaka Kobayashi¹, Shogo Nakamura¹, Seiichiro Higashi^1,3 (Grad. School of AdSM, Hiroshima Univ.¹, JSPS Research Fellow PD², RNBS, Hiroshima Univ.³)

Keywords:フレキシブル,転写,シリコン