The influence of annealing for Si<sub>0.99</sub>C<sub>0.01</sub> S/D n-MOSFET with electron irradiation

Masato Hori

Presentation information

Poster presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA2 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA2会場)

9:30 AM - 11:30 AM

[20a-PA2-10] The influence of annealing for Si_0.99C_0.01 S/D n-MOSFET with electron irradiation

^○Masato Hori¹, Masashi Yoneoka¹, Toshiyuki Nakashima², Eddy Simoen³, Cor Claeys³, Isao Tsunoda¹, Kenichiro Takakura¹ (KNCT¹, Chuo Denshi Kogyo Co. LTD.², imec³)

Keywords:MOSFET,電子線照射,熱処理

« Previous in this session
Next in this session »

▲

Presentation information

[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[20a-PA2-10] The influence of annealing for Si0.99C0.01 S/D n-MOSFET with electron irradiation

[20a-PA2-10] The influence of annealing for Si_0.99C_0.01 S/D n-MOSFET with electron irradiation