The 75th JSAP Autumn Meeting, 2014

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Poster presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[20a-PA3-1~7] 13.2 Insulator technology

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

9:30 AM - 11:30 AM

[20a-PA3-1] Silicon oxide layer created on insulators under high temperature and high humidity

○Tomoki Oku1, Manabu Okumura2, Toshihiko Shiga1, Masahiro Totsuka1, Hitoshi Watanabe1 (Mitsubishi Electric Corp.1, Melco Semiconductor Engineering Corp.2)

Keywords:シリコン酸化膜,耐湿性,分子軌道計算