Nano-contact Heteroepitaxy of GaSb on Si(001) and the HfO2/GaSb MOS Characteristics

Presentation information

Poster presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

9:30 AM - 11:30 AM

^○Noriyuki Miyata¹, Akihiro Ohtake², Masakazu Ichikawa³, Takahiro Mori¹, Tetsuji Yasuda¹ (AIST¹, NIMS², Univ. Tokyo³)

Keywords:高移動度チャネル,ヘテロエピ成長,MOS界面