[20p-A10-1~8] 6.3 Oxide-based electronics

▲ [20p-A10-2] Investigation of the NiGe bottom electrode in CeO₂ based ReRAM Devices

^○Jisong Jin¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hiroshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:ReRAM,NiGe