[20p-A10-1~8] 6.3 Oxide-based electronics

[20p-A10-3] Resistive Switching Characteristics of CeO_x/SiO₂ layers on n⁺- and p⁺-Si

^○(M1)Minori Sugiura¹, Mokhammad Hadi¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech FRC¹, Tokyo Tech IGSSE²)

Keywords:memory,ReRAM,breakdown