The 75th JSAP Autumn Meeting, 2014

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Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[20p-A10-1~8] 6.3 Oxide-based electronics

Sat. Sep 20, 2014 1:00 PM - 3:00 PM A10 (E214)

2:45 PM - 3:00 PM

[20p-A10-8] Retention time of aluminum oxide ReRAM

○Seiichi Kato1, Seisuke Nigo1, Giyuu Kido1 (NIMS1)

Keywords:ReRAM,酸化アルミニウム,リテンションタイム