[20p-C1-1~6] 18.5 Opto-electronics

▲ [20p-C1-3] Effect of Growth Temperature of GaAs/Al0.4Ga0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application

^〇Mohan Rajesh¹, Makoto Miura^2,3, Masao Nishioka⁴, Yasuhiko Arakawa^1,2,4 (NanoQuine, The University of Tokyo¹, PECST², PETRA³, IIS, The University of Tokyo⁴)

Keywords:Quantum Dots,Si substrate,MOCVD