The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-C5-1~8] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 1:00 PM - 3:00 PM C5 (Open Hall)

1:45 PM - 2:00 PM

[20p-C5-4] Emission properties of AlOx/AlN/GaN heterostructures grown by RF-MBE

Takeyoshi Onuma1-3, Yohei Sugiura2,3, Tomohiro Yamaguchi2, Tohru Honda2, Masataka Higashiwaki3 (TNCT1, Kogakuin Univ.2, NICT3)

Keywords:GaN,AlN,AlO