[13a-1D-1~11] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:平山秀樹(理研),長谷川繁彦(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[13a-1D-1] Wafer bonding method for group III nitride semiconductors

〇Ryoji Shinoda¹, Yousuke Katsu¹, Norikatsu Koide¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center)

9:00 AM - 9:15 AM

[13a-1D-2] Synthesis and evaluation of properties on a quasi-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

〇Fumio Kawamura¹, Naoomi Yamada², Takashi Taniguchi¹ (1.NIMS, 2.Chubu Univ.)

9:15 AM - 9:30 AM

[13a-1D-3] Faburication of GaN nanostructures using nano-silica sphere

〇Kouki Saitou¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^2,1, Muto Hiroyuki¹, Katumi Kishino³, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS, 3.Sophia Univ.)

9:30 AM - 9:45 AM

[13a-1D-4] Improved GaN/AlN Interface Abruptness and Enhanced Photoelectrochemical Properties by Optimizing the Growth Conditions Transition

〇Akihiro Nakamura¹, Michihiro Suzuki¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (1.Tokyo Univ., 2.GS+I)

9:45 AM - 10:00 AM

△ [13a-1D-5] Low Ohmic contact resistance V-based electrode for high AlN molar fraction n-type AlGaN

〇kazuki mori¹, toshiki kusafuka¹, motoaki iwaya¹, tetsuya Takeuchi¹, satoshi kamiyama¹, isamu akasaki^1,2, hiroshi amano^2,3 (1.Meijo univ., 2.Akasaki Res. Cen., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

[13a-1D-6] Modulation Characteristics of Quantum Well-Embedded Light-Emitting Transistors

〇Kazuhide Kumakura¹, Junichi Nishinaka¹, Hideki Yamamoto¹ (1.NTT BRL)

10:15 AM - 10:30 AM

[13a-1D-7] Characterization of Electrical Properties in AlGaN/GaN Recessed TLM Device Structures

〇Narihiko Maeda¹, Masanobu Hiroki², Satoshi Sasaki² (1.Tokyo Univ. of Tech., 2.NTT Basic Res. Labs.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [13a-1D-8] Characterization of GaN epilayer on (0001) sapphire using THz ellipsometry

〇KOHEI TACHI¹, TAKASHI FUJII^1,3, TSUTOMU ARAKI¹, YASUSHI NANISHI¹, TAKESHI NAGASHIMA², TOSHIYUKI IWAMOTO³, YUKINORI SATO³, NAOTAKE MORITA⁴, RYUICHI SUGIE⁴, SATOSHI KAMIYAMA⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP., 4.TRC., 5.Meijo Univ.)

11:00 AM - 11:15 AM

△ [13a-1D-9] Evaluation of m-plane GaN by using laser-induced THz emission

〇Yuji Sakai¹, Iwao Kawayama¹, Hidetoshi Nakanishi², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.SCREEN Holdings Co., Ltd.)

11:15 AM - 11:30 AM

[13a-1D-10] Simultaneous analysis of micro-area strain and Indium composition in selective-area grown InGaN using X-ray micro-beam

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi Univ., 2.JASRI)

11:30 AM - 11:45 AM

[13a-1D-11] Band gap modulation of hexagonal AlN by an electric field

〇Yuichi Ota¹ (1.TIRI)

Session information