Symposium

Symposium » Trend of Functional Atomic Thin Film Application

[13p-1A-1~15] Trend of Functional Atomic Thin Film Application

Sun. Sep 13, 2015 1:15 PM - 6:15 PM 1A (131+132)

座長:安藤淳(産総研),吹留博一(東北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[13p-1A-1] Opening

〇Toshihiro Shimada¹ (1.Hokkaido Univ.)

1:30 PM - 2:00 PM

[13p-1A-2] Application of Titanium Disulfide Nanosheet to Thermoelectrics

〇Kunihito Koumoto¹, Chunlei Wan² (1.TPCRI, 2.Tsinghua Univ.)

2:00 PM - 2:15 PM

[13p-1A-3] Thermoelectric properties of transition metal dichalcogenide monolayers

〇Kaito Kanahashi¹, Jiang Pu¹, Nguyen Thanh Cuoug², Lain-Jong Li³, Susumu Okada⁴, Hiromichi Ohta⁵, Taishi Takenobu^1,6 (1.Waseda Univ, 2.NIMS, 3.KAUST, 4.Tsukuba Univ., 5.Hokkaido Univ., 6.Waseda ZAIKEN)

2:15 PM - 2:45 PM

[13p-1A-4] Optical Properties of Atomic Layered Transition Metal Dichalcogenides towards Opto-electronic Application

〇Shinichiro Mouri¹ (1.Institute of Advanced Energy, Kyoto University)

2:45 PM - 3:00 PM

[13p-1A-5] Photoluminescence of large-area monolayer WSe₂film
modulated by electric field and carrier density

〇Keiichiro Matsuki¹, Jiang Pu¹, Daichi Kozawa², Kazunari Matsuda³, Lain-Jong Li⁴, Taishi Takenobu^1,5 (1.Waseda Univ., 2.JSPS, 3.Kyoto Univ., 4.KAUST, 5.Waseda ZAIKEN)

3:00 PM - 3:15 PM

[13p-1A-6] Volatile organic compounds sensing using MoS₂ flake capacitor

〇Masaru Shimizu¹, Naoto Matsutake¹, Daisuke Ueki¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (1.Osaka Univ.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 4:00 PM

[13p-1A-7] Transition Metal Dichalcogenides as a Channel Material for Ultra-Thin Body MOSFETs

〇Takahiro Mori¹, Naruki Ninomiya^1,2, Noriyuki Uchida¹, Toshitaka Kubo¹, Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Masatoshi Tanaka², Atsushi Ando¹ (1.AIST, 2.YNU, 3.NIMS)

4:00 PM - 4:15 PM

[13p-1A-8] Polarity of Carriers injected from Schottky Barrier of Transition Metal Dichalcogenide α-MoTe₂

〇Shu Nakaharai¹, Mahito Yamamoto¹, Keiji Ueno², Yen-Fu Lin¹, Songlin Li¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Saitama Univ.)

4:15 PM - 4:30 PM

△ [13p-1A-9] Controlled layer-by-layer oxidation of atomically thin WSe₂

〇(PC)Mahito Yamamoto¹, Shu Nakaharai¹, Keiji Ueno², Kazuhito Tsukagoshi¹ (1.NIMS, 2.Saitama Univ.)

4:30 PM - 4:45 PM

[13p-1A-10] Edge Effect on Electrode Contacts to Transition Metal Dichalcogenides

〇Ryo Nouchi¹ (1.Osaka Pref. Univ.)

4:45 PM - 5:15 PM

[13p-1A-11] Application of transition metal dichalcogenides for spin and superconductor electronics

〇Tomoki Machida¹ (1.IIS, Univ. of Tokyo)

5:15 PM - 5:30 PM

△ [13p-1A-12] Synthesis of crystalline NbS₂ thin films by chemical vapor deposition

〇Sho Watanabe¹, Mengting Weng¹, Takashi Yanase², Taro Nagahama³, Toshihiro Shimada³ (1.Hokkaido Univ., 2.Hokkaido Univ. FCC, 3.Faculty of Engineering, Hokkaido Univ.)

5:30 PM - 5:45 PM

[13p-1A-13] Compositional Control and Characterization of RO(F)BiS₂ (R:La,Ce,Pr,Nd) Single Crystals

〇Masanori Nagao¹, Akira Miura², Satoshi Watauchi¹, Takahiro Takei¹, Yoshihiko Takano³, Nobuhiro Kumada¹, Isao Tanaka¹ (1.Univ. of Yamanashi, 2.Hokkaido Univ., 3.NIMS)

5:45 PM - 6:00 PM

△ [13p-1A-14] Effects of van der Waals force on electronic structure of topological insulator superlattice

〇Yuta Saito¹, Paul Fons¹, Alexander V. Kolobov¹, Junji Tominaga¹ (1.AIST)

6:00 PM - 6:15 PM

[13p-1A-15] Closing

〇Keiji Ueno¹ (1.Saitama Univ.)

Session information

[13p-1A-1~15] Trend of Functional Atomic Thin Film Application

[13p-1A-1] Opening

[13p-1A-2] Application of Titanium Disulfide Nanosheet to Thermoelectrics

[13p-1A-3] Thermoelectric properties of transition metal dichalcogenide monolayers

[13p-1A-4] Optical Properties of Atomic Layered Transition Metal Dichalcogenides towards Opto-electronic Application

[13p-1A-5] Photoluminescence of large-area monolayer WSe₂film
modulated by electric field and carrier density

[13p-1A-6] Volatile organic compounds sensing using MoS₂ flake capacitor

[13p-1A-7] Transition Metal Dichalcogenides as a Channel Material for Ultra-Thin Body MOSFETs

[13p-1A-8] Polarity of Carriers injected from Schottky Barrier of Transition Metal Dichalcogenide α-MoTe₂

△ [13p-1A-9] Controlled layer-by-layer oxidation of atomically thin WSe₂

[13p-1A-10] Edge Effect on Electrode Contacts to Transition Metal Dichalcogenides

[13p-1A-11] Application of transition metal dichalcogenides for spin and superconductor electronics

△ [13p-1A-12] Synthesis of crystalline NbS₂ thin films by chemical vapor deposition

[13p-1A-13] Compositional Control and Characterization of RO(F)BiS₂ (R:La,Ce,Pr,Nd) Single Crystals

△ [13p-1A-14] Effects of van der Waals force on electronic structure of topological insulator superlattice

[13p-1A-15] Closing

Authentication

Session information

[13p-1A-1~15] Trend of Functional Atomic Thin Film Application

△ [13p-1A-9] Controlled layer-by-layer oxidation of atomically thin WSe2

△ [13p-1A-12] Synthesis of crystalline NbS2 thin films by chemical vapor deposition

△ [13p-1A-14] Effects of van der Waals force on electronic structure of topological insulator superlattice

Authentication

△ [13p-1A-9] Controlled layer-by-layer oxidation of atomically thin WSe₂

△ [13p-1A-12] Synthesis of crystalline NbS₂ thin films by chemical vapor deposition