Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-2H-1~21] 6.3 Oxide electronics

Sun. Sep 13, 2015 1:45 PM - 7:15 PM 2H (222)

座長:矢嶋赳彬(東大),藤原宏平(東北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

△ [13p-2H-1] Electro-deposition and characterization of Cu₂O/InP heterostructure

〇Sayaka Omi¹, Yusuke kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

2:00 PM - 2:15 PM

△ [13p-2H-2] Atomic resolution imaging of LaAlO₃(100) using non-contact atomic force microscopy

〇daiki katsube¹, yutaro takase¹, hayato yamashita¹, satoshi abo¹, fujio wakaya¹, masayuki abe¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO₂(110) surface

〇Ryota Shimizu¹, Hideyuki Kamisaka², Katsuya Iwaya³, Takeo Ohsawa⁴, Susumu Shiraki¹, Tetsuya Hasegawa², Taro Hitosugi¹ (1.Tohoku Univ., 2.Univ. of Tokyo, 3.RIKEN, 4.NIMS)

2:30 PM - 2:45 PM

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO₂

〇MASATO SHIMOTANI¹, HIROYA MURAKAMI¹, SHOTARO TAKEUCHI¹, AKIRA SAKAI¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

△ [13p-2H-5] Resistive switching characteristics in TiO₂-based ReRAM cells with Pt or Ag top electrode

〇Yutaka Kuriyama¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

[13p-2H-6] Epitaxial growth of high density epitaxial iron oxide nanodots and their switching properties for ubiquitous element ReRAM

〇Kentaro Watanabe¹, Yoshiki Maeda¹, Yuta Nakamoto¹, Hideki Matsui¹, Shotaro Takeuchi¹, Akira Sakai¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

〇Yoshiki Maeda¹, Kentaro Watanabe¹, Yuta Nakamoto¹, Hideki Matsui¹, Shotaro Takeuchi¹, Akira Sakai¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

△ [13p-2H-8] Topological Hall effect in BaBiO₃/SrRuO₃ heterostructures

〇Yuki Ohuchi¹, Masaki Uchida¹, Yusuke Kozuka¹, Jobu Matsuno², Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.RIKEN CEMS)

3:45 PM - 4:00 PM

△ [13p-2H-9] Specific Hall effect at a SrTiO₃ interface in low carrier concentration

〇Yohei Sato¹, Kiyomasa Doi¹, Yoshinori Onose¹, Kazunori Ueno¹ (1.Univ. Tokyo)

4:00 PM - 4:15 PM

△ [13p-2H-10] Sr composition dependence of electrical transport properties of Sr_xBa_1-xPbO₃ thin films

〇Tomoki Miyakawa¹, Junichi Shiogai¹, Atsushi Tsukazaki^1,2 (1.IMR, Tohoku Univ., 2.JST-PRESTO)

4:15 PM - 4:30 PM

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

〇(M2)KAZUKI NISHIHARA¹, JUNICHI SHIOGAI¹, ATSUSHI TSUKAZAKI^1,2 (1.IMR, Tohoku Univ., 2.PRESTO, JST)

Break (4:30 PM - 4:45 PM)

4:45 PM - 5:00 PM

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni_0.5Mn_1.5)O₄ epitaxial films

〇Hideyuki Kawasoko¹, Susumu Shiraki¹, Toru Suzuki¹, Ryota Simizu¹, Tetsuo Shirasawa², Taro Hitosugi¹ (1.Tohoku Univ. WPI-AIMR, 2.Univ. of Tokyo ISSP)

5:00 PM - 5:15 PM

△ [13p-2H-13] Nonvolatile Voltage Memory Developed with Solid Oxide Li Ion Electrolyte

〇Issei Sugiyama¹, Tohru Suzuki¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (1.Tohoku Univ.)

5:15 PM - 5:30 PM

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO₃ Thin films

〇SHINICHI NISHIHAYA¹, MASAKI UCHIDA¹, YUSUKE KOZUKA¹, YOSHIHIRO IWASA^1,2, MASASHI KAWASAKI^1,2 (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

5:30 PM - 5:45 PM

△ [13p-2H-15] Phase transition behavior of BaTiO₃ film grown on orthorhombic GdScO₃substrate

〇Shunsuke Kobayashi¹, Takeharu Kato¹, Tsukasa Hirayama¹, Yuichi Ikuhara^1,2, Takahisa Yamamoto^1,3 (1.JFCC, 2.Univ. Tokyo, 3.Nagoya Univ.)

5:45 PM - 6:00 PM

△ [13p-2H-16] Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

〇(M1)Hirokazu Okabe¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

6:00 PM - 6:15 PM

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

〇Ryo Kawabe¹, Hajime Hojo¹, Hajime Yamamoto¹, Keisuke Shimizu¹, Ko Mibu², Masaki Azuma¹ (1.Tokyo Tech., 2.Nagoya Tech.)

6:15 PM - 6:30 PM

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO₃ films

〇(M2)Keisuke Otomo¹, Shunsuke Kouno¹, Yohei Sato¹, Kazunori Ueno¹ (1.Dept. Basic Science, Univ. Tokyo)

6:30 PM - 6:45 PM

[13p-2H-19] Superconductivity of Magnéli phase Ti oxide films

〇Kouhei Yoshimatsu¹, Osami Sakata^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.NIMS, 3.MCES)

6:45 PM - 7:00 PM

△ [13p-2H-20] Superconductivity of γ-Ti₃O₅ films

〇Kouhei Yoshimatsu¹, Osami Sakata^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.NIMS, 3.MCES)

7:00 PM - 7:15 PM

△ [13p-2H-21] Epitaxial growth of Ti₂O₃ films and their anisotropy conductivity

〇(M1)Hikaru Kurokawa¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.Materials Research Center for element Strategy)

Session information

[13p-2H-1~21] 6.3 Oxide electronics

△ [13p-2H-1] Electro-deposition and characterization of Cu₂O/InP heterostructure

△ [13p-2H-2] Atomic resolution imaging of LaAlO₃(100) using non-contact atomic force microscopy

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO₂(110) surface

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO₂

△ [13p-2H-5] Resistive switching characteristics in TiO₂-based ReRAM cells with Pt or Ag top electrode

[13p-2H-6] Epitaxial growth of high density epitaxial iron oxide nanodots and their switching properties for ubiquitous element ReRAM

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

△ [13p-2H-8] Topological Hall effect in BaBiO₃/SrRuO₃ heterostructures

△ [13p-2H-9] Specific Hall effect at a SrTiO₃ interface in low carrier concentration

△ [13p-2H-10] Sr composition dependence of electrical transport properties of Sr_xBa_1-xPbO₃ thin films

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni_0.5Mn_1.5)O₄ epitaxial films

△ [13p-2H-13] Nonvolatile Voltage Memory Developed with Solid Oxide Li Ion Electrolyte

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO₃ Thin films

△ [13p-2H-15] Phase transition behavior of BaTiO₃ film grown on orthorhombic GdScO₃substrate

△ [13p-2H-16] Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO₃ films

[13p-2H-19] Superconductivity of Magnéli phase Ti oxide films

△ [13p-2H-20] Superconductivity of γ-Ti₃O₅ films

△ [13p-2H-21] Epitaxial growth of Ti₂O₃ films and their anisotropy conductivity

Authentication

Session information

[13p-2H-1~21] 6.3 Oxide electronics

△ [13p-2H-1] Electro-deposition and characterization of Cu2O/InP heterostructure

△ [13p-2H-2] Atomic resolution imaging of LaAlO3(100) using non-contact atomic force microscopy

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO2(110) surface

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO2

△ [13p-2H-5] Resistive switching characteristics in TiO2-based ReRAM cells with Pt or Ag top electrode

[13p-2H-6] Epitaxial growth of high density epitaxial iron oxide nanodots and their switching properties for ubiquitous element ReRAM

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe3O4-δ nanodots.

△ [13p-2H-8] Topological Hall effect in BaBiO3/SrRuO3 heterostructures

△ [13p-2H-9] Specific Hall effect at a SrTiO3 interface in low carrier concentration

△ [13p-2H-10] Sr composition dependence of electrical transport properties of SrxBa1-xPbO3 thin films

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO3 thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO3 buffer layer

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni0.5Mn1.5)O4 epitaxial films

△ [13p-2H-13] Nonvolatile Voltage Memory Developed with Solid Oxide Li Ion Electrolyte

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO3 Thin films

△ [13p-2H-15] Phase transition behavior of BaTiO3 film grown on orthorhombic GdScO3 substrate

△ [13p-2H-16] Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe1-xCoxO3 Thin Films

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO3 films

[13p-2H-19] Superconductivity of Magnéli phase Ti oxide films

△ [13p-2H-20] Superconductivity of γ-Ti3O5 films

△ [13p-2H-21] Epitaxial growth of Ti2O3 films and their anisotropy conductivity

Authentication

△ [13p-2H-1] Electro-deposition and characterization of Cu₂O/InP heterostructure

△ [13p-2H-2] Atomic resolution imaging of LaAlO₃(100) using non-contact atomic force microscopy

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO₂(110) surface

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO₂

△ [13p-2H-5] Resistive switching characteristics in TiO₂-based ReRAM cells with Pt or Ag top electrode

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

△ [13p-2H-8] Topological Hall effect in BaBiO₃/SrRuO₃ heterostructures

△ [13p-2H-9] Specific Hall effect at a SrTiO₃ interface in low carrier concentration

△ [13p-2H-10] Sr composition dependence of electrical transport properties of Sr_xBa_1-xPbO₃ thin films

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni_0.5Mn_1.5)O₄ epitaxial films

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO₃ Thin films

△ [13p-2H-15] Phase transition behavior of BaTiO₃ film grown on orthorhombic GdScO₃substrate

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO₃ films

△ [13p-2H-20] Superconductivity of γ-Ti₃O₅ films

△ [13p-2H-21] Epitaxial growth of Ti₂O₃ films and their anisotropy conductivity